vishay general semiconductor by228gp document number 88539 11-sep-06 www.vishay.com 1 clamper/damper glass passivated rectifier features ? superectifier structure for high reliability application ? cavity-free glass-passivated junction ? low forward voltage drop ? typical i r less than 0.1 a ? high forward surge capability ? meets environmental standard mil-s-19500 ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high voltage rectification of power supplies, inverters, converters and free-wheeling diodes specially designed for cl amping circuits, horizontal deflection systems and damper applications. mechanical data case: do-201ad, molded epoxy over glass body epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end do-201ad patented* ? * glass-plastic encapsulation technique is covered by patent no. 3,996,602, and brazed-lead assembly by patent no. 3,930,306 major ratings and characteristics i f(av) 2.5 a v rrm 1500 v i fsm 50 a i r 5.0 a v f 1.6 v t j max. 150 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol by228gp unit maximum non repetitive peak reverse voltage v rsm 1650 v maximum repetitive peak reverse voltage v rrm 1500 v maximum rms voltage v rms 1050 v maximum dc blocking voltage v dc 1500 v maximum average forward rectified current 0.375" (9.5 mm) lead lengths at t a = 50 c i f(av) 2.5 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 50 a working peak forward current at t a = 75 c i fwm 5.0 a peak repetitive forward surge current at t a = 75 c i frm 10 a operating junction temperature range t j - 65 to + 150 c storage temperature range t stg - 65 to + 200 c
www.vishay.com 2 document number 88539 11-sep-06 vishay general semiconductor by228gp note: (1) pulse test: 300 s pulse width, 1 % duty cycle note: (1) thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, p.c.b. mounted ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol by228gp unit maximum instantaneous forward voltage (1) at i f = 2.5 a v f 1.6 v maximum reverse current (1) at v r = 1500 v t a = 25 c t j = 140 c i r 5.0 200 a maximum reverse recovery time i f = 1.0 a, i r = 50 ma, di/dt = 50 ma/s t rr 20 s reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a typical maximum t rr 0.5 2.0 s maximum forward recovery time i f = 5.0 a with t r = 0.1 s t fr 1.0 s typical junction capacitance at 4.0 v, 1 mhz c j 40 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol by228gp unit typical thermal resistance (1) r ja 20 c/w ordering information preferred p/n unit weight (g) preferred package code base quantity delivery mode by228gp-e3/54 1.28 54 1400 13" diameter paper tape & reel by228gp-e3/73 1.28 73 1000 ammo pack packaging figure 1. forward current derating curve 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 a v erage for w ard re ctified c u rrent (a) am b ient temperat u re (c) 50 to 60 hz resisti v e or ind u cti v e load 0.375" (9.5 mm) lead length figure 2. maximum non-repetitive peak forward surge current 200 100 10 1 10 100 n o load rated load t j = t j max. 10 ms single sine- w a v e nu m b er of cycles at 50 hz peak for w ard s u rge c u rrent (a)
document number 88539 11-sep-06 www.vishay.com 3 by228gp vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. maximum peak repetitive forward surge current figure 4. typical instantaneous forward characteristics 10 100 1 10 100 t a = 75 c percent d u ty cycle ( % ) maxim u m peak repetiti v e for w ard c u rrent (apk) 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 30 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle figure 5. typical reverse characteristics figure 6. typical junction capacitance 0 20 40 60 8 0 100 0.1 1 10 0.01 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) t j = 125 c t j = 25 c 10 100 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz do-201ad 0.210 (5.3) 0.190 (4. 8 ) dia. 0.052 (1.32) 0.04 8 (1.22) dia. 1.0 (25.4) mi n . 1.0 (25.4) mi n . 0.375 (9.5) 0.2 8 5 (7.2)
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